Sct30n120 silicon carbide power mosfet 1200 v, 45 a, 90. Cgd15hb62p1 2ch gatedriver 1200v sic mosfet wolfspeed. Up to 5 a single channel igbtmosfet gate driver providing reinforced isolation up to 1200 v igbt and mosfet. Eicedriver sic mosfet gate driver ics infineon technologies. This results in unsurpassed onresistance per unit area and very good switching performance almost independent of temperature. Eicedriver galvanically isolated gate driver ics based on our coreless transformer technology and can be handled for ultrafast switching 1200v power. Arkansas power electronics international recommended for you.
Silicon carbide coolsic mosfets infineon technologies. Short circuit protection via gate driver ic desat protection. Igbt gate driver with wide flexible use to drive igbt modules up to 1200 v and igbt current 50 a up to 3600 a. Prodrive technologies cree dual 1200v sic mosfet driver. The floating channel can be used to drive nchannel power mosfets or igbts in the high side configuration which operates up to 1200 v.
Tj 150 c in an hip247 package, sct30n120, stmicroelectronics. A gate driver is a power amplifier that accepts a lowpower input from a controller ic and. The new drivers incorporate power integrations proprietary fluxlink, a solid. Gate driver ics with perfect fit to coolsic mosfet. Ix2120 1200v high and low side gate driver ixys integrated. Silicon carbide power mosfet 1200 v, 45 a, 90 mohm typ.
The bm60212fvc is high and low side drive ic which operates up to 1200v with bootstrap operation, which can drive nchannel power mosfet and igbt. This silicon carbide power mosfet is produced exploiting the advanced, innovative properties of wide bandgap materials. Tj150 c in an hip247 package, sct30n120, stmicroelectronics. Ultrafast switching 1200 v power transistors such as coolsic mosfets can be easier handled by means of isolated gate output sections. Cmttit8243 is a gate driver board optimized for 62mm silicon carbide. The bm602fvc is high and low side drive ic which operates up to 1200 v with bootstrap operation, which can drive nchannel power mosfet and igbt. Gate driver selection guide 2019 infineon technologies. The 2sc0106t drives 600 v to 1200 v igbts with collector currents up to 450 a and switches at frequencies up to 50 khz. Eicedriver 1200 v level shift gate driver ics infineon. Gate driver ics tailored for industrial drives, commercial airconditioning and general purpose motor control and inverters. Single channel providing up to 5 a peak gate drive current without boosters auxiliary outputs for external high and lowside nchannel booster stage for increased peak drive current up to 60a.
Sct30n120 silicon carbide power mosfet 1200 v, 45 a, 90 mohm typ. Rdhp1608 general purpose base board for scaleidriver sid1182k. Wolfspeed cgd15hb62p1 2ch gatedriver 1200v sic mosfet is a dualchannel gate driver for 1200v sic mosfet power modules with a maximum switching frequency. Sic mosfets suggests that proper gate drive design that. Coolsic 1200 v sic mosfet application note gnd2 r11 driver design guideline use a narrow width to handle the gate signal, and the power source tracksuse a much wider width to handle highcurrent and highpower conduction. Therefore, the galvanically isolated eicedriver ics based on infineons coreless transformer technology are recommended as most suitable.
Highperformance silicon carbidebased plugin hybrid electric vehicle battery charger duration. Therefore, the following eicedriver galvanically isolated gate driver ics based on our coreless transformer technology are recommended as most suitable. Sic mosfet 1200 v gate driver ics ultrafast switching power transistors such as coolsic mosfets can be easier handled by means of isolated gate output sections. Designing reliable, low and medium voltage electronic power systems has been made easier with the introduction of the scaleidriver igbt and power mosfet gate driver from power integrations.